high?power npn silicon transistors . . . designed for use in industrial ? military power amplifier and switching circuit applications. ? high collector ? emitter sustaining voltage ? v ceo(sus) = 100 vdc (min) ? 2n6338 = 150 vdc (min) ? 2n6341 ? high dc current gain ? h fe = 30 ? 120 @ i c = 10 adc = 12 (min) @ i c = 25 adc ? low collector ? emitter saturation voltage ? v ce(sat) = 1.0 vdc (max) @ i c = 10 adc ? fast switching times @ i c = 10 adc t r = 0.3 ms (max) t s = 1.0 ms (max) t f = 0.25 ms (max) these devices are available in pb ? free package(s). specifications herein apply to both standard and pb ? free devices. please see our website at www.onsemi.com for specific pb ? free orderable part numbers, or contact your local on semiconductor sales office or representative. ??????????????????????? ??????????????????????? *maximum ratings ????????? ????????? ???? ???? ?????? ?????? ????? ????? ??? ??? ????????? collector ? base voltage ???? ?????? ????? ??? ????????? ????????? ? emitter voltage ???? ???? ?????? ?????? ????? ????? ??? ??? ????????? ????????? ? base voltage ???? ???? ?????????? ?????????? ??? ??? ????????? ? ??????? ? ????????? collector current continuous peak ???? ? ?? ? ???? i c ?????????? ? ???????? ? ?????????? 25 50 ??? ? ? ? ??? adc ????????? ????????? ???? ???? ?????????? ?????????? ??? ??? ????????? ? ??????? ? ????????? total device dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ?????????? ? ???????? ? ?????????? 200 1.14 ??? ? ? ? ??? watts w/ c ????????? ????????? ???? ???? ?????????? ?????????? ??? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? ????? ????? ?????? ?????? ??? ??? ???????????? ???????????? thermal resistance, junction to case ????? ????? jc ?????? ?????? ??? ??? c/w *indicates jedec registered data. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2006 march, 2006 ? rev. 11 1 publication order number: 2n6338/d 2n6338 2n6341 *on semiconductor preferred device 25 ampere power transistors npn silicon 100, 120, 140, 150 volts 200 watts * case 1 ? 07 to ? 204aa (to ? 3)
2n6338 2n6341 http://onsemi.com 2 200 75 50 25 0 0 25 50 75 100 125 150 175 200 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts) 175 150 125 100 ????????????????????????????????? ????????????????????????????????? *electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector ? emitter sustaining voltage (1) 2n6338 (i c = 50 madc, i b = 0) 2n6341 ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 100 150 ???? ? ?? ? ???? ? ? ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 50 vdc, i b = 0) 2n6338 (v ce = 75 vdc, i b = 0) 2n6341 ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 50 50 ??? ? ? ? ??? adc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = rated v ceo , v eb(off) = 1.5 vdc) (v ce = rated v ceo , v eb(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ????? i cex ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 10 1.0 ??? ? ? ? ??? adc madc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 10 ??? ??? adc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 100 ??? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain) (i c = 0.5 adc, v ce = 2.0 vdc) (i c = 10 adc, v ce = 2.0 vdc) (i c = 25 adc, v ce = 2.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 50 30 12 ???? ? ?? ? ? ?? ? ???? ? 120 ? ??? ? ? ? ? ? ? ??? ? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector emitter saturation voltage (i c = 10 adc, i b = 1.0 adc) (i c = 25 adc, i b = 2.5 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 1.0 1.8 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? base ? emitter saturation voltage (i c = 10 adc, i b = 1.0 adc) (i c = 25 adc, i b = 2.5 adc) ????? ? ??? ? ? ??? ? ????? v be(sat) ??? ? ? ? ? ? ? ??? ? ? ???? ? ?? ? ? ?? ? ???? 1.8 2.5 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? emitter on voltage (i c = 10 adc, v ce = 2.0 vdc) ????? ??? ? ???? 1.8 ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current ? gain ? bandwidth product (2) (i c = 1.0 adc, v ce = 10 vdc, f test = 10 mhz) ????? ????? ??? ??? ???? ???? ? ??? ??? mhz ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 300 ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics ?????????????????????? ?????????????????????? rise time (v cc 80 vdc, i c = 10adc, i b1 = 1.0 adc, v be(off) = 6.0 vdc) ????? ????? ??? ??? ? ???? ???? 0.3 ??? ??? s ?????????????????????? ?????????????????????? 80 vdc, i c = 10 adc, i b1 = i b2 = 1.0 adc) ????? ????? ??? ??? ? ???? ???? 1.0 ??? ??? s ?????????????????????? ?????????????????????? 80 vdc, i c = 10 adc, i b1 = i b2 = 1.0 adc) ????? ????? ??? ??? ? ???? ???? 0.25 ??? ??? s *indicates jedec registered data. (1) pulse test: pulse width 300 s, duty cycle 2.0%. (2) f t = |h fe | ? f test .
2n6338 2n6341 http://onsemi.com 3 figure 2. switching time test circuit 1000 0.3 figure 3. turn ? on time i c , collector current (amp) t, time (ns) 500 100 70 50 10 0.5 0.7 2.0 3.0 7.0 30 + 11 v 0 v cc scope r b 10 ohms ? 5.0 v t r , t f 10 ns duty cycle = 1.0% r c 8.0 ohms 20 30 5.0 20 10 s ? 9.0 v 700 200 300 1.0 10 note: for information on figures 3 and 6, r b and r c were varied to obtain desired test conditions. + 80 v 1n4933 t d @ v be(off) = 6.0 v v cc = 80 v i c /i b = 10 t j = 25 c t r figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), effective transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 jc = r(t) jc jc = 0.875 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 0.3 3.0 30 300 100 2.0 figure 5. active region safe operating area 50 5.0 0.01 10 20 70 200 t j = 200 c 2n6338 2n6341 0.1 10 0.5 i c , collector current (amp) v ce , collector?emitter voltage (volts) 20 0.2 50 100 200 s 5.0 ms 1.0 ms dc 2.0 0.02 0.05 1.0 3.0 5.0 30 7.0 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 200 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
2n6338 2n6341 http://onsemi.com 4 5.0 0.3 figure 6. turn ? off time i c , collector current (amp) t, time (s) 2.0 1.0 0.5 0.3 0.2 0.1 0.07 0.05 0.5 0.7 1.0 2.0 5.0 10 20 30 v cc = 80 v i b1 = i b2 i c /i b = 10 t j = 25 c t s 3.0 0.7 3.0 t f 5000 0.1 figure 7. capacitance v r , reverse voltage (volts) 50 0.5 1.0 2.0 5.0 20 50 100 10 c, capacitance (pf) 700 500 200 100 t j = 25 c c ib c ob 3000 2000 1000 70 300 0.2
2n6338 2n6341 http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to?204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b ??? 1.050 ??? 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n ??? 0.830 ??? 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ? t ? seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t ? q ? ? y ? 2 1 u l g b v h case 1 ? 07 to ? 204aa (to ? 3) issue z on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 2n6338/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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